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Hishiki, Shigeomi*; Kanno, Ikuo*; Sugiura, Osamu*; Murase, Yasuhiro*; Nakamura, Tatsuya; Katagiri, Masaki
Radiation Detectors and Their Uses, p.113 - 117, 2003/00
We fabricated the schottkey-type InSb semiconductor radiation detector using an undoped InSb substrate, and evaluated the charactersitics of the alpha particle detection. The InSb detectors detected alphar particles successfully at all the tested temperature from 4.2 to 115 K. The 10-to-90% rise times of the preamplifier outputs were about 350 nsec regardless of the operating temperature. These fast rise times were about 20 times improved comparing to those from p-type InSb semiconductor detector.
Abe, Ken*; Kojima, Takuji; *; *; *; *; Sakai, Takuro; *
Radiation Detectors and Their Uses, p.323 - 328, 1998/00
no abstracts in English
Kaneko, Junichi; Katagiri, Masaki; Ikeda, Yujiro; Nishitani, Takeo
Radiation Detectors and Their Uses, p.259 - 263, 1998/00
no abstracts in English
Katagiri, Masaki; Ito, Hirokuni
Radiation Detectors and Their Uses,Proc of 8th Workshop; KEK Proc. 94-7, 0, p.174 - 178, 1994/00
no abstracts in English
Kakuta, Tsunemi; Shikama, Tatsuo*; *;
Radiation Detectors and Their Uses,Proc. of the 8th Workshop; KEK Proc. 94-7, 0, p.109 - 113, 1994/00
no abstracts in English